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AUFS3006 - N-Channel MOSFET

Features

  • TrenchFET® power MOSFET.
  • Package with low thermal resistance.
  • 100 % Rg and UIS tested TO-263 D G Top View S D G S N-Channel MOSFET.

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Datasheet Details

Part number AUFS3006
Manufacturer VBsemi
File Size 231.68 KB
Description N-Channel MOSFET
Datasheet download datasheet AUFS3006 Datasheet
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AUFS3006-VB PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration AUFS3006-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com 60 0.0025 0.0070 270 Single FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested TO-263 D G Top View S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.
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