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B04N03 - N-Channel 30V MOSFET

Datasheet Summary

Features

  • TrenchFET® Power MOSFET.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS Directive 2011/65/EU.

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Datasheet Details

Part number B04N03
Manufacturer VBsemi
File Size 242.31 KB
Description N-Channel 30V MOSFET
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    B04N03-VB B04N03-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.002 at VGS = 10 V 0.003 at VGS = 4.5 V TO-252 ID (A)a, e 100 90 Qg (Typ) 72 nC D FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy IAS L = 0.
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