VBsemi Electronics BSS131
N-Channel 200V (D-S) MOSFET
| Part No. | BSS131 |
|---|---|
| Datasheet | BSS131 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 200V (D-S) MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● 100 % Rg and UIS Tested
● Trench Power MOSFET
● Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G1 S2 3D Top View D G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 200 V VGS ± 20 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb TA = 25 °C TA = 70 °C ID 0.6 0.45 0.5 0.35 A IDM 2.5 Avalanche Currentb Single Avalanche Energy L = 0.1 mH IAS 2.5 EAS 50 mJ Continuous Source Current (Diode Conduction)a IS 0.6 A Power Dissipationa TA = 25 °C TA = 70 °C PD 1.55 1.20 1.03 0.87 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t5s Steady State Maximum Junction-to-Foot Steady State Notes: a. Surface mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature. Symbol RthJA RthJF Typical 80 130 45 Maximum 100 170 55 Unit °C/W 1 BSS131-VB SPECIFICATIONS (TA = 25 °C, unless otherwise noted) Limits Parameter Symbol Test Conditions Min.
