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BUK7Y25-80E - N-Channel 80V MOSFET

Key Features

  • Trench Power MOSFET.
  • 100 % Rg and UIS Tested.

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BUK7Y25-80E-VB PRODUCT SUMMARY VDS (V) 80 RDS(on) () Max. 0.0064 at VGS = 10 V 0.0070 at VGS = 6.0 V 0.0087 at VGS = 4.5 V 5 1 234 BUK7Y25-80E-VB Datasheet N-Channel 80 V (D-S) MOSFET ID (A) 75a 65a 54 Qg (Typ.) 17.1 nC 5 D FEATURES • Trench Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Primary Side Switching • Synchronous Rectification • DC/AC Inverters • LED Backlighting 4 G www.VBsemi.com 1, 2, 3 Source 4 Gate 5 Drain SSS 12 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 80 V VGS ± 20 TC = 25 °C 75a Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 62.7 28.6b, c Pulsed Drain Current (t = 100 μs) TA = 70 °C 24.