Datasheet4U Logo Datasheet4U.com

BUK7Y8R7-60E - N-Channel 60V MOSFET

Key Features

  • Trench Power MOSFET.
  • Package with Low Thermal Resistance.
  • 100 % Rg and UIS Tested 5 D 4 G SSS 12 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUK7Y8R7-60E N-channel 60V 8.7m ohm standard level MOSFET NXP Semiconductors
BUK7Y8R7-60E N-channel MOSFET nexperia
BUK7Y07-30B N-channel TrenchMOS standard level FET nexperia
BUK7Y07-30B N-Channel MOSFET NXP Semiconductors
BUK7Y08-40B N-channel TrenchMOS standard level FET nexperia

Other Datasheets by VBsemi

Part Number Description
BUK7Y25-80E N-Channel 80V MOSFET
BUK7635-55A N-Channel 60V MOSFET
BUK445-100A N-Channel 100V MOSFET
BUK655-500B N-Channel 600-V Power MOSFET
BUK9610-100B N-Channel 100V MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BUK7Y8R7-60E-VB www.VBsemi.com BUK7Y8R7-60E-VB Datasheet N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 60 0.0050 0.0055 97 Single 5 1 234 1, 2, 3 Source 4 Gate 5 Drain FEATURES • Trench Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested 5 D 4 G SSS 12 3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy IAS L = 0.