BUK7Y8R7-60E Description
BUK7Y8R7-60E-VB .VBsemi. BUK7Y8R7-60E-VB Datasheet N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 60 0.0050 0.0055 97 Single 5 1 234 1, 2, 3 Source 4 Gate.
BUK7Y8R7-60E Key Features
- Trench Power MOSFET
- Package with Low Thermal Resistance
- 100 % Rg and UIS Tested