Datasheet Summary
BUK7Y8R7-60E-VB
.VBsemi.
BUK7Y8R7-60E-VB Datasheet N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
60 0.0050 0.0055
97 Single
1 234
1, 2, 3 Source
Gate
Drain
Features
- Trench Power MOSFET
- Package with Low Thermal Resistance
- 100 % Rg and UIS Tested
5 D
4 G
SSS 12...
