Datasheet Summary
BUK9610-100B-VB
BUK9610-100B-VB Datasheet
N-Channel 100-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.010 at VGS = 10 V 100
0.023 at VGS = 4.5 V
ID (A) 100 85
Features
- Trench Power MOSFET
- 175 °C Maximum Junction Temperature
- pliant to RoHS Directive 2002/95/EC
TO-263
G DS Top View
N-Channel...