VBsemi Electronics BUZ104
N-Channel 60V MOSFET
| Part No. | BUZ104 |
|---|---|
| Datasheet | BUZ104 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 60V MOSFET |
| Buy | Stock & Price |
FEATURES
● Dynamic dV/dt rating● Fast switching
● Ease of paralleling Simple drive requirements D TO-220AB S D G G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current a VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Linear Derating Factor Single Pulse Avalanche Energy b Maximum Power Dissipation Peak Diode Recovery dV/dt c TC = 25 °C EAS PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 403 μH, Rg = 25 , IAS = 17 A (see fig. 12). c. ISD 17 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. LIMIT 60 ± 20 20 12 68 0.40 100 60 4.5 -55 to +175 300 10 1.1 UNIT V A W/°C mJ W V/ns °C lbf● in N●m 1 BUZ10...
