VBsemi Electronics BUZ111S
N-Channel 60V MOSFET
| Part No. | BUZ111S |
|---|---|
| Datasheet | BUZ111S Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 60V MOSFET |
| Buy | Stock & Price |
FEATURES
● Trench power MOSFET● Package with low thermal resistance
● 100 % Rg and UIS tested TO-263 D Top View S D G G N-Channel MOSFET S
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C a TC = 125 °C ID Continuous Source Current (Diode Conduction) a IS Pulsed Drain Current b IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation b TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). PCB Mount c SYMBOL RthJA RthJC LIMIT 60 ± 20 150 65 120 350 65 211 220 70 -55 to +175 LIMIT 40 0.65 UNIT V A mJ W °C UNIT °C/W MMJSRRJUTUU 1 BUZ111S-VB SPECIFICATIONS (TC = 25 °C, unless otherwise n...
