BUZ38 - N-channel 200V MOSFET

Features

Trench Power MOSFET.
175 °C Junction Temperature.
PWM Optimized.
100 % Rg Tested.
Compliant to RoHS Directive 2002/95/EC.

VBsemi

Datasheet Details

Part number	BUZ38
Manufacturer	VBsemi
File Size	254.60 KB
Description	N-channel 200V MOSFET
Datasheet	BUZ38 Datasheet

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BUZ38-VB BUZ38-VB Datasheet N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.110 at VGS = 10 V TO-220AB ID (A) 30 FEATURES • Trench Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch DRAIN connected to TAB GD S Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Avalanche Current IAS Single Pulse Avalanche Energy L = 0.

Published: May 7, 2025 |