CEB16N10L - N-Channel MOSFET

VBsemi

Key Features

TrenchFET® Power MOSFET.
175 °C Junction Temperature.
Low Thermal Resistance Package.
100 % Rg Tested.

CEB16N10L n-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	CEB16N10L
Manufacturer	VBsemi
File Size	173.99 KB
Description	N-Channel MOSFET
Datasheet	CEB16N10L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEB16N10L-VB CEB16N10L-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 100 0.100 at VGS = 10 V D2PAK (TO-263) G D S ID (A) 20 D FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 % Rg Tested APPLICATIONS • Isolated DC/DC Converters G S N-Channel MOSFET RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current Single Pulse Avalanche Energyb L = 0.