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CEB16N10L - N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Power MOSFET.
  • 175 °C Junction Temperature.
  • Low Thermal Resistance Package.
  • 100 % Rg Tested.

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Datasheet preview – CEB16N10L

Datasheet Details

Part number CEB16N10L
Manufacturer VBsemi
File Size 173.99 KB
Description N-Channel MOSFET
Datasheet download datasheet CEB16N10L Datasheet
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Full PDF Text Transcription

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CEB16N10L-VB CEB16N10L-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 100 0.100 at VGS = 10 V D2PAK (TO-263) G D S ID (A) 20 D FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 % Rg Tested APPLICATIONS • Isolated DC/DC Converters G S N-Channel MOSFET RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current Single Pulse Avalanche Energyb L = 0.
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