CEB16N10L Description
CEB16N10L-VB CEB16N10L-VB Datasheet N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 100 0.100 at VGS = 10 V D2PAK (TO-263) G D S ID (A) 20.
CEB16N10L Key Features
- TrenchFET® Power MOSFET
- 175 °C Junction Temperature
- Low Thermal Resistance Package
- 100 % Rg Tested