CEB4060AL Datasheet | VBsemi

FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Surface Mount - Available in Tape and Reel - Dynamic d V/dt Rating - Logic-Level Gate Drive - Fast Switching - pliant to Ro HS Directive 2002/95/EC S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentf Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery d V/dtc VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C TA = 25 °C EAS PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 179 μH, Rg = 25 , IAS = 51 A (see fig. 12). c. ISD  51 A, d I/dt  250 A/μs, VDD  VDS, TJ  175 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). f. Current limited by the package, (die current = 51 A). LIMIT 60 ± 10 50 36 200 1.0 0.025 400 150 3.7 4.5 - 55 to + 175 300d UNIT V W/°C m J W V/ns °C CEB4060AL-VB .VBsemi. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL...