CEP51A3 - N-Channel 30V MOSFET

Datasheet Summary

Features

Trench Power MOSFET.
100 % Rg and UIS Tested.
Compliant to RoHS Directive 2011/65/EU D G S GD S N-Channel MOSFET.

VBsemi

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Datasheet Details

Part number	CEP51A3
Manufacturer	VBsemi
File Size	275.91 KB
Description	N-Channel 30V MOSFET
Datasheet	CEP51A3 Datasheet
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CEP51A3-VB CEP51A3-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration Package 30 0.006 0.009 80 Single TO-220AB TO-220AB FEATURES • Trench Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU D G S GD S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.

Published: Apr 28, 2025 |