VBsemi Electronics CES2312
N-Channel MOSFET
| Part No. | CES2312 |
|---|---|
| Datasheet | CES2312 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● 100 % Rg Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● DC/DC Converters● Load Switch for Portable
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current IDM TC = 25 °C TA = 25 °C IS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) Limit 20 ± 12 6a 5.1 5b, c 4b, c 20 1.75 1.04b, c 2.1 1.3 1.25b, c 0.8b, c - 55 to 150 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t≤5s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 °C/W. e.
