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CMP5950-VB
CMP5950-VB Datasheet P-Channel 100 V (D-S) 175 °C MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration
TO-220AB
- 100 0.033 0.037 - 50 Single
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • Trench Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
S
G
GD S Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C TC = 125 °C
ID
Continuous Source Current (Diode Conduction)a
IS
Pulsed Drain Currentb
IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
IAS L = 0.