VBsemi Electronics CMS4828
Dual N-Channel 60V MOSFET
| Part No. | CMS4828 |
|---|---|
| Datasheet | CMS4828 Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual N-Channel 60V MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Trench Power MOSFET
● 100 % UIS Tested
● 100 % Rg Tested
● Compliant to RoHS Directive 2002/95/EC S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2
APPLICATIONS
● Set Top Box● Low Current DC/DC D1 G1 D2 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 60 V VGS ± 20 TC = 25 °C 10a Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 8.2 7.2b, c Pulsed Drain Current TA = 70 °C 6.2b, c A IDM 40 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 2.25 1.48b, c Single Pulse Avalanche Current L = 0.1 mH IAS 30 Single Pulse Avalanche Energy EAS 55 mJ TC = 25 °C 2.7 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 4.77 2.78b, c W TA = 70 °C 1.14b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Notes: a.
