D2210 Overview
Key Features
- TrenchFET® Power MOSFET
- 175 °C Junction Temperature
- PWM Optimized
- 100 % Rg Tested
- Compliant to RoHS Directive 2002/95/EC
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| D2210UK | Seme LAB | METAL GATE RF SILICON FET |
| D2217 | NEC | NPN SILICON EPITAXIAL TRANSISTOR |
| D221 | MicroPower Direct | D200 Series / DC/DC Converters |
| D2212UK | Seme LAB | METAL GATE RF SILICON FET |
| D221I | MicroPower Direct | D200I Series / High Isolation Miniature / 2W SIP DC/DC COnverters |