VBsemi Electronics D4189
P-Channel 40V MOSFET
| Part No. | D4189 |
|---|---|
| Datasheet | D4189 Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel 40V MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® power MOSFET● Package with low thermal resistance
● 100 % Rg and UIS tested TO-252 S G GDS Top View D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b Operating Junction and Storage Temperature Range TC = 25 °C a TC = 125 °C L = 0.1 mH TA = 25 °C TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT -40 ± 20 -50 -39 -50 -200 -40 80 3 136 45 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. PCB Mount c SYMBOL RthJA RthJC LIMIT 50 1.1 UNIT V A mJ W °C UNIT °C/W 1 D4189-VB SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN.
