DMG1012T Description
DMG1012T DMG1012T N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 0.270 at VGS = 4.5 V 20 0.390 at VGS = 2.5 V ID (A) c 0.85 0.70 Qg (TYP.) 1.4 nC SC-75.
DMG1012T Key Features
- TrenchFET® power MOSFET
- 100 % Rg tested