VBsemi Electronics DTP5N80FSJ
N-Channel 800V Power MOSFET
| Part No. | DTP5N80FSJ |
|---|---|
| Datasheet | DTP5N80FSJ Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 800V Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Dynamic dV/dt Rating● Repetitive Avalanche Rated
● Isolated Central Mounting Hole
● Fast Switching
● Ease of Paralleling
● Simple Drive Requirements
● Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO-220 FULLPAK D GDS Top View G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 23 mH, Rg = 25 Ω, IAS = 7.8 A (see fig.
