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F1010EZS - N-Channel 60V MOSFET

Key Features

  • TrenchFET® power MOSFET.
  • Package with low thermal resistance.
  • 100 % Rg and UIS tested TO-263 D Top View S D G G N-Channel MOSFET S.

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Datasheet Details

Part number F1010EZS
Manufacturer VBsemi
File Size 387.42 KB
Description N-Channel 60V MOSFET
Datasheet download datasheet F1010EZS Datasheet

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Full PDF Text Transcription (Reference)

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F1010EZS-VB F1010EZS-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 4 m 150 A Single FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested TO-263 D Top View S D G G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C a TC = 125 °C ID Continuous Source Current (Diode Conduction) a IS Pulsed Drain Current b IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.