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F1S30P05 - P-Channel MOSFET

Features

  • TrenchFET® Power MOSFET.
  • 100 % UIS Tested.

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Datasheet Details

Part number F1S30P05
Manufacturer VBsemi
File Size 193.71 KB
Description P-Channel MOSFET
Datasheet download datasheet F1S30P05 Datasheet
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    F1S30P05-VB F1S30P05-VB Datasheet P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.019 at VGS = - 10 V 0.025 at VGS = - 4.5 V ID (A)a - 80 - 70 Qg (Typ.) 76 nC FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Load Switch www.VBsemi.com D2PAK (TO-263) S G GD S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.
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