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F25NM50N - N-Channel 500V MOSFET

Key Features

  • Low figure-of-merit (FOM): Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Low gate charge (Qg).
  • Avalanche energy rated (UIS) TO-220.

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Datasheet Details

Part number F25NM50N
Manufacturer VBsemi
File Size 322.34 KB
Description N-Channel 500V MOSFET
Datasheet download datasheet F25NM50N Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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F25NM50N-VB F25NM50N-VB Datasheet N-Channel 500-V (D-S) Super Junction MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 86 14 25 Single 0.