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F640NL - N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Power.

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Datasheet Details

Part number F640NL
Manufacturer VBsemi
File Size 311.51 KB
Description N-Channel MOSFET
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    F640NL-VB F640NL-VB Datasheet N-Channel 200-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 200 0.038 at VGS = 15 V 0.043 at VGS = 10 V ID (A) 45 40 Qg (Typ.) 57 TO-262 FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested APPLICATIONS • Power Supply • Lighting Systems D RoHS COMPLIANT SS D G Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C ID Pulsed Drain Current IDM Single Pulse Avalanche Current Single Pulse Avalanche Energya L = 0.
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