VBsemi Electronics F640NL
N-Channel MOSFET
| Part No. | F640NL |
|---|---|
| Datasheet | F640NL Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFETS● 175 °C Junction Temperature
● 100 % Rg and UIS Tested
APPLICATIONS
● Power Supply● Lighting Systems D RoHS COMPLIANT SS D G Top View G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C ID Pulsed Drain Current IDM Single Pulse Avalanche Current Single Pulse Avalanche Energya L = 0.1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). Symbol RthJA RthJC Limit 200 ± 25 45 26 150 20 20 166b 3.12 - 55 to 175 Limit 40 0.75 Unit V A mJ W °C Unit °C/W 1 F640NL-VB SPECIFICATIONS T J = 25 °C, unless otherwise noted Parameter S...
