VBsemi Electronics F7702
P-Channel MOSFET
| Part No. | F7702 |
|---|---|
| Datasheet | F7702 Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free● TrenchFET® Power MOSFETs Pb-free Available RoHS* COMPLIANT D1 S2 S3 G4 TSSOP-8 Top View 8D 7S 6S 5D S* G * Source Pins 2, 3, 6 and 7 must be tied common. D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS -20 V VGS ± 12 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (10 µs Pulse Width) TA = 25 °C TA = 70 °C ID - 9.0 -7.8 - 6.8 -5.8 A IDM - 30 Continuous Source Current (Diode Conduction)a IS - 1.35 - 0.95 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 1.5 1.05 1.0 0.67 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 65 100 43 Maximum 83 120 52 Unit °C/W 1 F7702-VB SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min.
