F8910 - Dual N-Channel 20V MOSFET

VBsemi

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
Trench Power MOSFET.
100 % UIS Tested.
100 % Rg Tested.
Compliant to RoHS Directive 2002/95/EC.

F8910 dual n-channel 20v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	F8910
Manufacturer	VBsemi
File Size	215.58 KB
Description	Dual N-Channel 20V MOSFET
Datasheet	F8910 Datasheet

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F8910-VB F8910-VB Datasheet Dual N-Channel 20-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.009 at VGS = 4.5 V 20 0.012 at VGS = 2.5 V ID (A) 10 8.0 Qg (Typ.) 15 nC SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Trench Power MOSFET • 100 % UIS Tested • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Set Top Box • Low Current DC/DC D1 D2 G1 S1 N-Channel MOSFET G2 S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ± 12 TC = 25 °C 10a Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 7.0 8.