FBE30S Description
FBE30S-VB Datasheet N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 800 VGS = 10 V 0 4 11 Single 0.85.
FBE30S Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)