FBE30S - N-Channel MOSFET

VBsemi

Key Features

Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS).

FBE30S n-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	FBE30S
Manufacturer	VBsemi
File Size	341.13 KB
Description	N-Channel MOSFET
Datasheet	FBE30S Datasheet

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Full PDF Text Transcription (Reference)

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FBE30S-VB www.VBsemi.com FBE30S-VB Datasheet N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 800 VGS = 10 V 0 4 11 Single 0.