FMA16N50E - N-Channel 550V Power MOSFET

VBsemi

Key Features

Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS).
Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching D TO-220.

FMA16N50E n-channel 550v power mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	FMA16N50E
Manufacturer	VBsemi
File Size	292.68 KB
Description	N-Channel 550V Power MOSFET
Datasheet	FMA16N50E Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FMA1	General purpose (dual digital transistors)	Rohm
FMA1-06025	EC AXIAL FAN	Qualtek
FMA1-08038	EC AXIAL FAN	Qualtek
FMA1-09225	EC AXIAL FAN	Qualtek
FMA1-12038	EC AXIAL FAN	Qualtek

Other Datasheets by VBsemi

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

FMA16N50E-VB FMA16N50E-VB Datasheet N-Channel 550V (D-S) Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 150 12 25 Single 0.