FPC60 - N-Channel 650V MOSFET

VBsemi

Key Features

Reduced trr, Qrr, and IRRM.
Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Low switching losses due to reduced Qrr.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS).

FPC60 n-channel 650v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	FPC60
Manufacturer	VBsemi
File Size	246.89 KB
Description	N-Channel 650V MOSFET
Datasheet	FPC60 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FPC-AM	Area Sensor	FINGERPRINTS
FPC06073	4 to 8GHz 10dB Directional Coupler	Knowles
FPC1011C	Area Sensor	FINGERPRINTS
FPC1011F	Area Sensor	FINGERPRINTS
FPC1011F3	Area Sensor	FINGERPRINTS

Other Datasheets by VBsemi

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

FPC60-VB FPC60-VB Datasheet N-Channel 650 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 106 14 33 Single 0.