FS16VS-6 Datasheet | VBsemi

FEATURES - Low figure-of-merit (FOM) Ron x Qg - Low input capacitance (Ciss) - Reduced switching and conduction losses - Low gate charge (Qg) - Avalanche energy rated (UIS) APPLICATIONS - puting - PC silver box / ATX power supplies D D2PAK (TO-263) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a VGS at 10 V TC = 25 °C TC = 100 °C Linear Derating Factor Single Pulse Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode d V/dt d VDS = 0 V to 80 % VDS Soldering Remendations (Peak Temperature) c for 10 s VDS VGS ID IDM EAS PD TJ, Tstg d V/dt Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 m H, Rg = 25 Ω, IAS = 3.1 A. c. 1.6 mm from case. d. ISD ≤ ID, d I/dt = 100 A/μs, starting TJ = 25 °C. LIMIT 500 ± 30 18 12 50 1.25 186 206 -55 to +150 70 27 300 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Rth JA Rth JC TYP. - MAX. 62 0.8 UNIT...