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FS30SM-6 - N-Channel MOSFET

Key Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS) RoHS.

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Datasheet Details

Part number FS30SM-6
Manufacturer VBsemi
File Size 266.66 KB
Description N-Channel MOSFET
Datasheet download datasheet FS30SM-6 Datasheet

Full PDF Text Transcription for FS30SM-6 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FS30SM-6. For precise diagrams, and layout, please refer to the original PDF.

FS30SM-6-VB www.VBsemi.com FS30SM-6-VB Datasheet N-Channel 600V(D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs ...

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DUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 273 46 79 Single 0.

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Mitsubishi Electric Semiconductor Logo FS30SM-6 N-Channel Power MOSFET Mitsubishi Electric Semiconductor

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