FS523 - N-Channel 60V MOSFET

VBsemi

Key Features

Isolated Package.
High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
Sink to Lead Creepage Distance = 4.8 mm.
175 °C Operating Temperature.
Dynamic dV/dt Rating.
Low Thermal Resistance.
Lead (Pb)-free Available RoHS.

FS523 n-channel 60v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	FS523
Manufacturer	VBsemi
File Size	1.05 MB
Description	N-Channel 60V MOSFET
Datasheet	FS523 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FS50	LINEAR HALL-EFFECT SENSORS	Feeling Technology
FS500R17OE4D	IGBT	Infineon
FS500R17OE4DP	IGBT	Infineon
FS50AS-03	N-Channel Power MOSFET	Mitsubishi Electric Semiconductor
FS50ASJ-03	N-Channel Power MOSFET	Mitsubishi Electric Semiconductor

Other Datasheets by VBsemi

Part Number	Description
FS50SM-2	N-Channel MOSFET
FS59N10D	Power MOSFET
FS5KM-18A	Power MOSFET
FS5KM-6	N-Channel 650V Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

FS523-VB FS523-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 95 27 46 Single 0.027 TO-220 FULLPAK FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.