VBsemi Electronics FS70SM-06
N-Channel MOSFET
| Part No. | FS70SM-06 |
|---|---|
| Datasheet | FS70SM-06 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® power MOSFET● Package with low thermal resistance
● 100 % Rg and UIS tested TO-3P D G D S D (TAB) G N-Channel MOSFET S
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a TC = 25 °C TC = 125 °C Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissipation b TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 60 ± 20 150 88 120 480 65 211 175 56 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. SYMBOL RthJA RthJC LIMIT 40 0.88 UNIT V A mJ W °C UNIT °C/W 1 FS70SM-06-VB SPECIFICATIONS (TC =...
