• Part: FU120N
  • Description: N-Channel 100V MOSFET
  • Category: MOSFET
  • Manufacturer: VBsemi
  • Size: 258.88 KB
Download FU120N Datasheet PDF
VBsemi
FU120N
FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Available in Tape and Reel - Dynamic d V/dt Rating - Repetitive Avalanche Rated - 175 °C Operating Temperature - Fast Switching - Ease of Paralleling Available Available TO-251 Drain Connected to Drain-Tab GDS Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C Linear Derating Factor (PCB Mount) Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount) Peak Diode Recovery d V/dtc TC = 25 °C TA = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) For 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction...