VBsemi Electronics GT2610
N-Channel MOSFET
| Part No. | GT2610 |
|---|---|
| Datasheet | GT2610 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® power MOSFET● 100 % Rg and UIS tested TSOP-6 D1 D2 6D 5D G3 4S Top View
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction) IS Pulsed Drain Current a IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy IAS L = 0.1 mH EAS Maximum Power Dissipation a Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C PD TJ, Tstg LIMIT 60 ± 20 7 4 6 29 10 5 5 1.6 - 55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). PCB Mount b SYMBOL RthJA RthJF LIMIT 110 30 UNIT V A mJ W °C UNIT °C/W 1 GT2610-VB SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage Gate-Source T...
