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GT2610 - N-Channel MOSFET

Features

  • TrenchFET® power MOSFET.
  • 100 % Rg and UIS tested www. VBsemi. com TSOP-6 D1 D2 6D 5D G3 4S Top View.

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Datasheet preview – GT2610

Datasheet Details

Part number GT2610
Manufacturer VBsemi
File Size 219.12 KB
Description N-Channel MOSFET
Datasheet download datasheet GT2610 Datasheet
Additional preview pages of the GT2610 datasheet.

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Full PDF Text Transcription

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GT2610-VB PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration GT2610-VB Datasheet N-Channel 60 V (D-S) MOSFET 60 0.030 0.035 7 Single FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested www.VBsemi.com TSOP-6 D1 D2 6D 5D G3 4S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction) IS Pulsed Drain Current a IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy IAS L = 0.1 mH EAS Maximum Power Dissipation a Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C PD TJ, Tstg LIMIT 60 ± 20 7 4 6 29 10 5 5 1.
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