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HIRF740 - N-Channel 650V Power MOSFET

Key Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

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Datasheet Details

Part number HIRF740
Manufacturer VBsemi
File Size 239.88 KB
Description N-Channel 650V Power MOSFET
Datasheet download datasheet HIRF740 Datasheet

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HIRF740-VB www.VBsemi.com HIRF740-VB Datasheet N-Channel 650 V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 38 4 4.2 Single 0.