HM8810A - Dual N-Channel MOSFET

VBsemi

Key Features

Halogen-free Option Available.
TrenchFET® Power MOSFETs.
100 % Rg Tested.
Compliant to RoHS Directive 2002/95/EC Pb-free Available RoHS.

HM8810A dual n-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	HM8810A
Manufacturer	VBsemi
File Size	258.45 KB
Description	Dual N-Channel MOSFET
Datasheet	HM8810A Datasheet

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HM8810A Dual N-Channel MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.024 at VGS = 4.5 V 20 0.028 at VGS = 2.5 V ID (A) 6.0 5.0 FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Pb-free Available RoHS* COMPLIANT TSOP6 Top View S1 1 6 D1/D2 2 5 S2 3 4 G1 D1/D2 G2 D D G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ± 12 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID 6.0 5.2 4.8 4.2 A IDM 30 Continuous Source Current (Diode Conduction)a IS 1.5 1.0 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 1.