VBsemi Electronics HMS4294
N-Channel 100V Power MOSFET
| Part No. | HMS4294 |
|---|---|
| Datasheet | HMS4294 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 100V Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Super Trench technology Power MOSFET● Excellent gate charge x Rds (on) product(FOM)
● Very low on-resfistance Rds (on)
● 100 % Rg and UIS Tested S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D D G
APPLICATIONS
● DC/DC Primary Side Switch● Telecom/Server
● Motor Drive Control
● Synchronous Rectification S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ± 20 TC = 25 °C 15.5 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 13 10.2b, c TA = 70 °C 7.4b, c A Pulsed Drain Current (t = 300 µs) IDM 70 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 7 3.1b, c Single Pulse Avalanche Current L = 0.1 mH IAS 30 Avalanche Energy EAS 45 mJ TC = 25 °C 7.8 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 5 3.5b, c W TA = 70 °C 2.2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t 10 s Maximum Junction-to-Foot (Drain) Steady State Notes: a.
