Full PDF Text Transcription for HY060N08P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HY060N08P. For precise diagrams, and layout, please refer to the original PDF.
HY060N08P-VB HY060N08P-VB Datasheet N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) 0.0064 at VGS = 10 V 0.0070 at VGS = 6.0 V 0.0087 at VGS = 4.5 V TO...
View more extracted text
Ω) 0.0064 at VGS = 10 V 0.0070 at VGS = 6.0 V 0.0087 at VGS = 4.5 V TO-220 FULLPAK ID (A) 215 a 205a 184 Qg (Typ.) 17.1 nC D G FEATURES • Trench Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Primary Side Switching • Synchronous Rectification • DC/AC Inverters • LED Backlighting www.VBsemi.