HY060N08P
FEATURES
- Trench Power MOSFET
- 100 % Rg and UIS Tested
APPLICATIONS
- Primary Side Switching
- Synchronous Rectification
- DC/AC Inverters
- LED Backlighting
.VBsemi.
GDS Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C TA = 25 °C
215a 205a
186 b, c
Pulsed Drain Current (t = 100 μs)
TA = 70 °C
149 b, c A
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
75a 4.5b, c
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 m H
45 m J
TC = 25...
