HY3210B Description
HY3210B-VB HY3210B-VB Datasheet N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.010 at VGS = 10 V 100 0.023 at VGS = 4.5 V ID (A) 100.
HY3210B Key Features
- TrenchFET® Power MOSFET
- 175 °C Maximum Junction Temperature
- pliant to RoHS Directive 2002/95/EC