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HY3210B - N-Channel 100V MOSFET

Datasheet Summary

Features

  • TrenchFET® Power MOSFET.
  • 175 °C Maximum Junction Temperature.
  • Compliant to RoHS Directive 2002/95/EC TO-263 G DS Top View D G S N-Channel MOSFET.

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Datasheet Details

Part number HY3210B
Manufacturer VBsemi
File Size 286.11 KB
Description N-Channel 100V MOSFET
Datasheet download datasheet HY3210B Datasheet
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Full PDF Text Transcription

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HY3210B-VB HY3210B-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.010 at VGS = 10 V 100 0.023 at VGS = 4.5 V ID (A) 100 85 FEATURES • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC TO-263 G DS Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 125 °C 100 ID 75 a A Pulsed Drain Current IDM 300 Avalanche Current Single Pulse Avalanche Energyb IAS 75 L = 0.1 mH EAS 280 mJ Maximum Power Dissipationb TC = 25 °C (TO-220AB and TO-263) TA = 25 °C (TO-263)d PD 250c 3.
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