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HY3410P - N-Channel 100V MOSFET

Datasheet Summary

Features

  • TrenchFET® Power MOSFET.
  • 175 °C Maximum Junction Temperature.
  • Compliant to RoHS Directive 2002/95/EC TO-220AB D GD S G S N-Channel MOSFET.

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Datasheet Details

Part number HY3410P
Manufacturer VBsemi
File Size 259.00 KB
Description N-Channel 100V MOSFET
Datasheet download datasheet HY3410P Datasheet
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Full PDF Text Transcription

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HY3410P-VB HY3410P-VB Datasheet N-Channel 100-V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 100 0.009 0.020 100 Single FEATURES • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC TO-220AB D GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 125 °C 100 ID 75 a A Pulsed Drain Current IDM 300 Avalanche Current Single Pulse Avalanche Energyb IAS 75 L = 0.
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