IPB80N06S2L-H5 - N-Channel MOSFET

Datasheet Summary

Features

TrenchFET® power MOSFET.
Package with low thermal resistance.
100 % Rg and UIS tested TO-263 D Top View S D G G N-Channel MOSFET S.

VBsemi

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Datasheet Details

Part number	IPB80N06S2L-H5
Manufacturer	VBsemi
File Size	387.60 KB
Description	N-Channel MOSFET
Datasheet	IPB80N06S2L-H5 Datasheet
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IPB80N06S2L-H5-VB IPB80N06S2L-H5-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 4 m 150 A Single FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested TO-263 D Top View S D G G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C a TC = 125 °C ID Continuous Source Current (Diode Conduction) a IS Pulsed Drain Current b IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.

Published: Jul 18, 2024 |