IPB80N06S2L-H5 Description
IPB80N06S2L-H5-VB IPB80N06S2L-H5-VB Datasheet N-Channel 60 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 4 m 150 A Single.
IPB80N06S2L-H5 Key Features
- TrenchFET® power MOSFET
- Package with low thermal resistance
- 100 % Rg and UIS tested