VBsemi Electronics IRFBE20
Power MOSFET
IRFBE20 Specifications
- Package : TO-220-3
- Mount Type : Through Hole
- Current Rating : 1.8A
- Breakdown Voltage : 800V
- RDS(on) Max : 6.5Ω
- Input Capacitance : 530pF
- Terminals : 3
- Channels : 1
- Rise Time : 17ns
- Fall Time : 27ns
- Max Power Dissipation : 54W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | IRFBE20 |
|---|---|
| Datasheet | IRFBE20 Download |
| Manufacturer | VBsemi Electronics |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Dynamic dV/dt Rating
● Repetitive Avalanche Rated
● Fast Switching
● Ease of Paralleling
● Simple Drive Requirements
● Compliant to RoHS Directive 2002/95/EC TO-220AB D S D G G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 29 mH, Rg = 25 , IAS = 4.1 A (see fig. 12). c. ISD 4.1 A, dI/dt 100 A/μs, VDD 600 V, TJ 150 °C. d.
