VBsemi Electronics IRLD024PBF
Power MOSFET
| Part No. | IRLD024PBF |
|---|---|
| Datasheet | IRLD024PBF Download |
| Manufacturer | VBsemi Electronics |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Dynamic dV/dt Rating● For Automatic Insertion
● End Stackable
● 175 °C Operating Temperature
● Fast Switching
● Ease of Paralleling
● Simple Drive Requirements
● Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT HVMDIP S G D D G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VDS VGS TA = 25 °C VGS at 10 V ID TA = 100 °C IDM Single Pulse Avalanche Energyb EAS Maximum Power Dissipation Peak Diode Recovery dV/dtc TA = 25 °C PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 , IAS = 2.5 A (see fig. 12). c. ISD 17 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. LIMIT 6...
