Datasheet4U Logo Datasheet4U.com

IRLR3110ZPBF - N-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested.
  • 100 % UIS Tested.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRLR3110ZPBF Power MOSFET International Rectifier
IRLR3110Z N-Channel MOSFET INCHANGE
IRLR3114Z N-Channel MOSFET INCHANGE
IRLR3114ZPbF Power MOSFET International Rectifier
IRLR3103 Power MOSFET International Rectifier

Other Datasheets by VBsemi

Part Number Description
IRLR3410TRPBF N-Channel MOSFET
IRLR2905ZTRPBF N-Channel MOSFET
IRLR7843TRPBF N-Channel MOSFET
IRLR9343TRPBF P-Channel MOSFET
IRL2910PBF N-Channel 100V MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRLR3110ZPBF www.VBsemi.com IRLR3110ZPBF N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0075 at VGS = 10 V 100 0.0095 at VGS = 4.5 V ID (A) 85 75 TO-252 FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • Primary Side Switch • Isolated DC/DC Converter D GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 125 °C 85 ID 75 a A Pulsed Drain Current IDM 300 Avalanche Current Single Pulse Avalanche Energyb IAS 75 L = 0.1 mH EAS 280 mJ Maximum Power Dissipationb TC = 25 °C (TO-252 and TO-251) PD 210 W TA = 25 °C (TO-252) 3.