IXFH15N80Q - N-Channel 800V Power MOSFET

VBsemi

Key Features

Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS).

IXFH15N80Q n-channel 800v power mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	IXFH15N80Q
Manufacturer	VBsemi
File Size	252.40 KB
Description	N-Channel 800V Power MOSFET
Datasheet	IXFH15N80Q Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IXFH15N80Q	HiPerFET Power MOSFETs	IXYS Corporation
IXFH15N80	Power MOSFET	IXYS Corporation
IXFH15N100	HiPerFET Power MOSFETs	IXYS
IXFH15N100P	Power MOSFET	IXYS Corporation
IXFH15N100Q	HiPerFET Power MOSFETs	IXYS Corporation

Other Datasheets by VBsemi

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

IXFH15N80Q-VB www.VBsemi.com IXFH15N80Q-VB Datasheet N-Channel 800 V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 800 VGS = 10 V 73 9 17 Single 0.