VBsemi Electronics J414
P-Channel 60V MOSFET
| Part No. | J414 |
|---|---|
| Datasheet | J414 Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel 60V MOSFET |
| Buy | Stock & Price |
FEATURES
● Trench Power MOSFET 100● % UIS Tested
APPLICATIONS
● Load Switch S D2PAK (TO-263) G G D S D P-Channel MOSFETABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C ID - 30 - 20 Pulsed Drain Current IDM - 90 A Continuing Source Current (Diode Conduction) IS - 28 Avalanche Current IAS - 31 Single Pulse Avalanche Energy Maximum Power Dissipation L = 0.1 mH EAS TC = 25 °C TA = 25 °C PD 7.2 mJ 60 a 6b W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb Junction-to-Case Notes: a. See SOA curve for voltage derating. b. Surface Mounted on 1" x 1" FR-4 boad. t ≤ 10 sec Steady State Symbol RthJA RthJC Typical 20 62 5 Maximum 25 75 6 Unit °C/W 1 J414-VB SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate Thre...
