VBsemi Electronics J601-Z
P-Channel 60V MOSFET
| Part No. | J601-Z |
|---|---|
| Datasheet | J601-Z Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel 60V MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFET● Material categorization:
APPLICATIONS
● Load Switch S G GDS Top View D P-Channel MOSFETABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS - 60 V VGS ± 20 Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current TC = 25 °C TC = 125 °C ID - 50 - 40 A IDM - 160 Avalanche Current IAS - 50 Single Pulse Avalanche Energya L = 0.1 mH EAS 125 mJ Power Dissipation TC = 25 °C TA = 25 °C PD 113c 2.5b, c W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb Junction-to-Case Notes: a. Duty cycle 1 %. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Package limited. t 10 s Steady State Symbol RthJA RthJC Typical 15 40 0.82 Maximum 18 50 1.1 Unit °C/W 1 J601-Z-VB SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ.
