VBsemi Electronics J648
P-Channel 20V MOSFET
| Part No. | J648 |
|---|---|
| Datasheet | J648 Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel 20V MOSFET |
| Buy | Stock & Price |
FEATURES
● Trench power MOSFET● 100 % R tested
● Fast switching speed
APPLICATIONS
● Load / power switch for portable devices● Drivers: relays, solenoids, displays
● Battery operated systems
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TA = 25 °C ID TA = 70 °C Pulsed Drain Current (t = 300 μs) IDM Continuous Source-Drain Diode Current Maximum Power Dissipation TA = 25 °C IS TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg LIMIT -20 ± 20 -0.40 b, c -0.31 b, c -1.6 -0.16 b, c 0.19 b, c 0.12 b, c -55 to +150 THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a, b t≤5s Steady State Notes a. Maximum under steady state conditions is 650 °C/W. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. SYMBOL RthJA TYPICAL 440 540 MAXIMUM 530 650 UNIT V A W °C UNIT °C/W 1 J648-VB SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)...
