• Part: K16J60W
  • Manufacturer: VBsemi
  • Size: 255.29 KB
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K16J60W Key Features

  • Reduced trr, Qrr, and IRRM
  • Low figure-of-merit (FOM) Ron x Qg
  • Low input capacitance (Ciss)
  • Low switching losses due to reduced Qrr
  • Ultra low gate charge (Qg)
  • Avalanche energy rated (UIS)

K16J60W Description

K16J60W-VB Datasheet N-Channel 600 V (D-S) Super Junction MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 106 14 33 Single 0.19 TO-3P G D S D D (TAB).