K16J60W Overview
K16J60W-VB Datasheet N-Channel 600 V (D-S) Super Junction MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 106 14 33 Single 0.19 TO-3P G D S D D (TAB).
K16J60W Key Features
- Reduced trr, Qrr, and IRRM
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Low switching losses due to reduced Qrr
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)