K2022 - N-channel 650V Power MOSFET

VBsemi

Key Features

Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS).

K2022 n-channel 650v power mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	K2022
Manufacturer	VBsemi
File Size	286.49 KB
Description	N-channel 650V Power MOSFET
Datasheet	K2022 Datasheet

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Other Datasheets by VBsemi

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K2022-VB K2022-VB Datasheet /$IBOOFM7 %4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 0 VGS = 10 V 1.